Infineon Technologies - IRHQ93110PBF

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IRHQ93110PBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRHQ93110PBF
Description P-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 28; Package Style (Meter): CHIP CARRIER; Transistor Application: SWITCHING;
Datasheet IRHQ93110PBF Datasheet
In Stock439
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 75 mJ
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2.3 A
Maximum Pulsed Drain Current (IDM): 9.2 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 28
Minimum DS Breakdown Voltage: 100 V
Terminal Position: QUAD
Package Style (Meter): CHIP CARRIER
JESD-30 Code: S-CQCC-N28
No. of Elements: 4
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: 1.1 ohm
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