IRLML5103GPBF by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRLML5103GPBF
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .54 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): .76 A;
Datasheet	IRLML5103GPBF Datasheet
In Stock	254

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.76 A
Sub-Category:	Other Transistors
Surface Mount:	YES
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.54 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.6 ohm
Moisture Sensitivity Level (MSL):	1
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	P-CHANNEL
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Additional Features:	HIGH RELIABILITY
Maximum Drain Current (Abs) (ID):	.76 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
254	-	-

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