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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | JANKCAF2N7389 |
Description | N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Package Style (Meter): UNCASED CHIP; Qualification: Qualified; |
Datasheet | JANKCAF2N7389 Datasheet |
In Stock | 386 |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 6.5 A |
Sub-Category: | Other Transistors |
Surface Mount: | YES |
Terminal Finish: | TIN LEAD |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 25 W |
Terminal Position: | UPPER |
Package Style (Meter): | UNCASED CHIP |
JESD-30 Code: | R-XUUC-N3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN |
Polarity or Channel Type: | N-CHANNEL AND P-CHANNEL |
JESD-609 Code: | e0 |
Qualification: | Qualified |
Additional Features: | RADIATION HARDENED |
Reference Standard: | MIL-19500/657A |
Maximum Drain Current (Abs) (ID): | 6.5 A |