Infineon Technologies - JANSR2N7626UB

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JANSR2N7626UB by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number JANSR2N7626UB
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Package Style (Meter): SMALL OUTLINE; Minimum DS Breakdown Voltage: 60 V;
Datasheet JANSR2N7626UB Datasheet
In Stock1,061
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .53 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 3
Minimum DS Breakdown Voltage: 60 V
Qualification: Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-XDSO-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Reference Standard: MIL-19500; RH - 100K Rad(Si)
Maximum Drain-Source On Resistance: 1.4 ohm
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