Infineon Technologies - JANTXVH2N7471T1

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JANTXVH2N7471T1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number JANTXVH2N7471T1
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Maximum Operating Temperature: 125 Cel; Maximum Drain Current (Abs) (ID): 45 A;
Datasheet JANTXVH2N7471T1 Datasheet
In Stock513
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 208 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 125 Cel
Maximum Drain Current (ID): 45 A
Maximum Drain Current (Abs) (ID): 45 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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