Infineon Technologies - PXFC192207FHV3R250

PXFC192207FHV3R250 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number PXFC192207FHV3R250
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 19 dB; No. of Elements: 1; JESD-30 Code: R-CQFP-X4;
Datasheet PXFC192207FHV3R250 Datasheet
In Stock63
NAME DESCRIPTION
Minimum Power Gain (Gp): 19 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 65 V
Terminal Position: QUAD
Package Style (Meter): FLATPACK
JESD-30 Code: R-CQFP-X4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: L BAND
Maximum Operating Temperature: 225 Cel
Case Connection: SOURCE
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