Infineon Technologies - Q67050-A4114

  1. Home
  2. Infineon Technologies - Q67050-A4114
Q67050-A4114 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number Q67050-A4114
Description N-Channel; Maximum Gate-Emitter Voltage: 20 V; Maximum Gate-Emitter Threshold Voltage: 5 V; Maximum Operating Temperature: 150 Cel; Nominal Turn Off Time (toff): 683 ns; Nominal Turn On Time (ton): 68 ns;
Datasheet Q67050-A4114 Datasheet
In Stock344
NAME DESCRIPTION
Nominal Turn Off Time (toff): 683 ns
Maximum Collector-Emitter Voltage: 1200 V
Nominal Turn On Time (ton): 68 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Polarity or Channel Type: N-Channel
Maximum VCEsat: 3.6 V
Minimum Operating Temperature: -55 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
344 - -

Popular Products

Category Top Products

IRGP4640DPBF by Infineon Technologies

IRGP4640DPBF

Infineon Technologies

IRGP4640DPBF by Infineon is an N-CHANNEL IGBT with 600V VCEsat, 65A IC, and 250W power dissipation. Ideal for power control applications, it features a built-in diode, 31ns rise time, and -55 to 175°C operating temperature range.
IXXH30N60B3D1 by IXYS Corporation

IXXH30N60B3D1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 60 A; Terminal Finish: MATTE TIN;
IRG4BC30KDPBF by Infineon Technologies

IRG4BC30KDPBF

Infineon Technologies

IRG4BC30KDPBF by Infineon is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 28A max collector current. It has a 120ns fall time, 370ns turn off time, and can handle up to 100W power dissipation. Ideal for motor control applications due to its single configuration and flange mount package style.
HGTD1N120BNS9A by Intersil

HGTD1N120BNS9A

Intersil

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 5.3 A; Transistor Element Material: SILICON;
APT50GR120JD30 by Microsemi

APT50GR120JD30

Microsemi

Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 417 W; Maximum Collector Current (IC): 84 A; Maximum Collector-Emitter Voltage: 1200 V; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
DF160R12W2H3FB11BPSA1 by Infineon Technologies

DF160R12W2H3FB11BPSA1

Infineon Technologies

Infineon's DF160R12W2H3FB11BPSA1 IGBT features N-CHANNEL polarity, 1200V max collector-emitter voltage, and 375ns nominal turn-off time. Ideal for power control applications with complex configuration, it has 4 elements and operates from -40°C with a 30-terminal flange mount package.
IXXX300N60C3 by IXYS Corporation

IXXX300N60C3

IXYS Corporation

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 2300 W; Maximum Collector Current (IC): 510 A; Terminal Finish: Matte Tin (Sn); Maximum Gate-Emitter Threshold Voltage: 5.5 V;
CM500HA-34A by Powerex

CM500HA-34A

Powerex

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 500 A; Case Connection: ISOLATED; Terminal Position: UPPER;
IGP40N65F5XKSA1 by Infineon Technologies

IGP40N65F5XKSA1

Infineon Technologies

Infineon Technologies' IGP40N65F5XKSA1 is an N-CHANNEL IGBT with 650V VCE, 74A IC, and 255W power dissipation. Ideal for high-power applications requiring efficient switching capabilities in industrial equipment, renewable energy systems, and motor drives.
IXDP20N60BD1 by IXYS Corporation

IXDP20N60BD1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 32 A; Additional Features: HIGH SPEED; Nominal Turn Off Time (toff): 315 ns;
FP15R12W1T4B3BOMA1 by Infineon Technologies

FP15R12W1T4B3BOMA1

Infineon Technologies

Infineon Technologies' FP15R12W1T4B3BOMA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and nominal turn off time of 495ns. Ideal for power control applications, this UL approved transistor features a rectangular package style with flange mount.
IGW08T120 by Infineon Technologies

IGW08T120

Infineon Technologies

IGW08T120 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 16A. It is designed for power control applications, featuring a nominal turn-off time of 710ns and a max power dissipation of 70W. The package style is flange mount with through-hole terminals, making it suitable for high-power electronic systems.
APT150GN120JDQ4 by Microsemi

APT150GN120JDQ4

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 215 A; Terminal Form: UNSPECIFIED;
NXH450B100H4Q2F2PG by Onsemi

NXH450B100H4Q2F2PG

Onsemi

NXH450B100H4Q2F2PG by Onsemi is an N-CHANNEL IGBT with 3 BANKS, SERIES CONNECTED configuration. It has a Max VCEsat of 2.25V and a Nominal Turn Off Time of 224ns, making it ideal for POWER CONTROL applications. With a Max Collector-Emitter Voltage of 1000V and Max Power Dissipation of 234W, this IGBT operates in temperatures ranging from -40°C to 150°C.
APT75GP120JDQ3 by Microsemi

APT75GP120JDQ3

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 543 W; Maximum Collector Current (IC): 128 A; Maximum Collector-Emitter Voltage: 1200 V;
IKW15T120FKSA1 by Infineon Technologies

IKW15T120FKSA1

Infineon Technologies

IKW15T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and current of 30A. It has a turn-off time of 720ns and turn-on time of 85ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and operates at temperatures up to 150°C.
FS25R12YT3 by Infineon Technologies

FS25R12YT3

Infineon Technologies

Infineon FS25R12YT3 is an N-CHANNEL IGBT with VCEsat of 2.15V, IC of 40A, and Pmax of 165W. Ideal for high-power applications like motor drives due to its fast turn-off time (toff) of 640ns and turn-on time (ton) of 120ns in a RECTANGULAR package style.
FS75R12KE3BOSA1 by Infineon Technologies

FS75R12KE3BOSA1

Infineon Technologies

FS75R12KE3BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 105A, and turn off time of 610ns. Ideal for high-power applications requiring fast switching such as motor drives and power supplies.
SKM150GB12T4G by Semikron International

SKM150GB12T4G

Semikron International

SKM150GB12T4G by Semikron: N-CHANNEL IGBT with 2 elements, VCEsat of 2.1V, IC of 220A. Ideal for power control applications due to its high voltage rating of 1200V and max operating temperature of 175°C. Recognized by UL, it features a flange mount package style for easy installation.
IKD15N60RFATMA1 by Infineon Technologies

IKD15N60RFATMA1

Infineon Technologies

IKD15N60RFATMA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 30A IC, and 250W power dissipation. It operates up to 175°C making it suitable for high-power applications in industries like automotive and renewable energy.