SIGC109T120R3 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	SIGC109T120R3
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 100 A; Nominal Turn Off Time (toff): 610 ns; Qualification: Not Qualified;
Datasheet	SIGC109T120R3 Datasheet
In Stock	783

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	100 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6.5 V
Sub-Category:	Insulated Gate BIP Transistors
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Nominal Turn Off Time (toff):	610 ns
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	1200 V
Terminal Position:	UPPER
Nominal Turn On Time (ton):	330 ns
Package Style (Meter):	UNCASED CHIP
JESD-30 Code:	R-XUUC-N
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
783	$10.470	$8,198.010

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