Infineon Technologies - SIGC12T120LEX1SA5

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SIGC12T120LEX1SA5 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SIGC12T120LEX1SA5
Description N-CHANNEL; Surface Mount: YES; Maximum Collector Current (IC): 8 A; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet SIGC12T120LEX1SA5 Datasheet
In Stock716
NAME DESCRIPTION
Maximum Collector Current (IC): 8 A
Maximum Collector-Emitter Voltage: 1200 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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