Infineon Technologies - SIGC25T60SN

SIGC25T60SN by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SIGC25T60SN
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 41 A; No. of Terminals: 3; Maximum Rise Time (tr): 58 ns;
Datasheet SIGC25T60SN Datasheet
In Stock917
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 41 A
Configuration: SINGLE
Transistor Element Material: SILICON
Maximum Rise Time (tr): 58 ns
Transistor Application: MOTOR CONTROL
Maximum Gate-Emitter Threshold Voltage: 5 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Nominal Turn Off Time (toff): 349 ns
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 79 ns
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XUUC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Maximum Fall Time (tf): 70 ns
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