SIGC39T60E by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	SIGC39T60E
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector-Emitter Voltage: 600 V; Package Shape: RECTANGULAR; Maximum Operating Temperature: 175 Cel;
Datasheet	SIGC39T60E Datasheet
In Stock	319

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6.5 V
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Minimum Operating Temperature:	-40 Cel
No. of Terminals:	3
Maximum Collector-Emitter Voltage:	600 V
Terminal Position:	UPPER
Package Style (Meter):	UNCASED CHIP
JESD-30 Code:	R-XUUC-N3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Maximum Operating Temperature:	175 Cel
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	1.85 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
319	-	-

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