SKB10N60A by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	SKB10N60A
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 92 W; Maximum Collector Current (IC): 20 A; Terminal Position: SINGLE;
Datasheet	SKB10N60A Datasheet
In Stock	206

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	20 A
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Maximum Rise Time (tr):	15 ns
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	5 V
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	YES
Nominal Turn Off Time (toff):	224 ns
No. of Terminals:	2
Maximum Power Dissipation (Abs):	92 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	40 ns
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Maximum Fall Time (tf):	32 ns
Moisture Sensitivity Level (MSL):	1
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	N-CHANNEL
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	600 V
Additional Features:	LOW CONDUCTION LOSS
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	245

Pricing (USD)

Qty.	Unit Price	Ext. Price
206	-	-

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