IXYS Corporation - VWM350-0075P

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VWM350-0075P by IXYS Corporation

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Manufacturer IXYS Corporation
Manufacturer's Part Number VWM350-0075P
Description N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Case Connection: ISOLATED; Maximum Drain Current (ID): 340 A; Transistor Application: SWITCHING;
Datasheet VWM350-0075P Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 340 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 24
Minimum DS Breakdown Voltage: 75 V
Qualification: Not Qualified
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X24
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .0033 ohm
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