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| Manufacturer | Littelfuse |
|---|---|
| Manufacturer's Part Number | IXA40PG1200DHGLB |
| Description | N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 230 W; Maximum Collector Current (IC): 63 A; Nominal Turn Off Time (toff): 350 ns; |
| Datasheet | IXA40PG1200DHGLB Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 63 A |
| Configuration: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Transistor Application: | POWER CONTROL |
| Sub-Category: | Insulated Gate BIP Transistors |
| Surface Mount: | YES |
| Terminal Finish: | Nickel (39) Tin (984) |
| Nominal Turn Off Time (toff): | 350 ns |
| No. of Terminals: | 9 |
| Maximum Power Dissipation (Abs): | 230 W |
| Terminal Position: | DUAL |
| Nominal Turn On Time (ton): | 110 ns |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G9 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | ISOLATED |
| Polarity or Channel Type: | N-CHANNEL |
| Maximum Collector-Emitter Voltage: | 1200 V |
| Additional Features: | HIGH RELIABILITY |
| Maximum Gate-Emitter Voltage: | 20 V |
| Reference Standard: | UL RECOGNIZED |
| Maximum VCEsat: | 2.15 V |
