Littelfuse - MITH125PF1700YI

  1. Home
  2. Littelfuse - MITH125PF1700YI
MITH125PF1700YI by Littelfuse

Image shown is a representation only.

Manufacturer Littelfuse
Manufacturer's Part Number MITH125PF1700YI
Description Insulated Gate Bipolar Transistors;
Datasheet MITH125PF1700YI Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

IKW25N120T2FKSA1 by Infineon Technologies

IKW25N120T2FKSA1

Infineon Technologies

IKW25N120T2FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 50A IC, and 504ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE and SILICON transistor element material. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
FGH50N6S2D by Fairchild Semiconductor

FGH50N6S2D

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 463 W; Maximum Collector Current (IC): 75 A; Qualification: Not Qualified;
IRG4PC50FPBF by Infineon Technologies

IRG4PC50FPBF

Infineon Technologies

IRG4PC50FPBF by Infineon Technologies is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 70A max collector current. It has a 190ns max fall time, making it suitable for high-power applications like motor drives and inverters. The package style is flange mount with through-hole terminals.
HGTG40N60C3 by Intersil

HGTG40N60C3

Intersil

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Nominal Turn Off Time (toff): 435 ns; Transistor Element Material: SILICON;
FF900R12IE4VBOSA1 by Infineon Technologies

FF900R12IE4VBOSA1

Infineon Technologies

FF900R12IE4VBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V. It has a nominal turn-off time of 940ns and a nominal turn-on time of 350ns. This IGBT is commonly used in applications that require high power switching, such as motor drives and power supplies.
HGT1S10N120BNST by Fairchild Semiconductor

HGT1S10N120BNST

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 35 A; JESD-609 Code: e3;
FF1400R12IP4BOSA1 by Infineon Technologies

FF1400R12IP4BOSA1

Infineon Technologies

FF1400R12IP4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V and turn-off time of 1200ns. Ideal for power control applications due to its SILICON material and operating temperature up to 175°C.
IRG4BC20UD-STRL by International Rectifier

IRG4BC20UD-STRL

International Rectifier

IRG4BC20UD-STRL by International Rectifier is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a nominal turn-off time of 320ns, making it suitable for power control applications requiring fast switching speeds. This IGBT comes in a small outline package with gull wing terminals for surface mount assembly.
IRGP4640DPBF by Infineon Technologies

IRGP4640DPBF

Infineon Technologies

IRGP4640DPBF by Infineon is an N-CHANNEL IGBT with 600V VCEsat, 65A IC, and 250W power dissipation. Ideal for power control applications, it features a built-in diode, 31ns rise time, and -55 to 175°C operating temperature range.
IXGR16N170AH1 by IXYS Corporation

IXGR16N170AH1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Maximum Collector Current (IC): 16 A; No. of Elements: 1;
HGTP10N120BN by Fairchild Semiconductor

HGTP10N120BN

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 35 A; Transistor Application: MOTOR CONTROL;
FF225R12ME4BOSA1 by Infineon Technologies

FF225R12ME4BOSA1

Infineon Technologies

FF225R12ME4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode, and thermistor. It has a max voltage of 1200V, current of 320A, and turn-off time of 600ns. Ideal for applications requiring high power efficiency in industrial systems.
IXBX75N170 by IXYS Corporation

IXBX75N170

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1040 W; Maximum Collector Current (IC): 200 A; JESD-30 Code: R-PSIP-T3;
NXH450B100H4Q2F2PG by Onsemi

NXH450B100H4Q2F2PG

Onsemi

NXH450B100H4Q2F2PG by Onsemi is an N-CHANNEL IGBT with 3 BANKS, SERIES CONNECTED configuration. It has a Max VCEsat of 2.25V and a Nominal Turn Off Time of 224ns, making it ideal for POWER CONTROL applications. With a Max Collector-Emitter Voltage of 1000V and Max Power Dissipation of 234W, this IGBT operates in temperatures ranging from -40°C to 150°C.
FPF2C110BI07AS2 by Onsemi

FPF2C110BI07AS2

Onsemi

Onsemi's FPF2C110BI07AS2 is an N-CHANNEL IGBT for POWER CONTROL applications. It features a Max VCEsat of 2.3V, Nominal Turn Off Time of 152ns, and Max Collector-Emitter Voltage of 650V. This COMPLEX transistor with 6 elements operates b/w -40 to 150 °C and has a Max Power Dissipation of 158W in a RECTANGULAR package style.
FGH60N60SFTU by Fairchild Semiconductor

FGH60N60SFTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 378 W; Maximum Collector Current (IC): 120 A; No. of Terminals: 3;
FP25R12W2T4B11BOMA1 by Infineon Technologies

FP25R12W2T4B11BOMA1

Infineon Technologies

FP25R12W2T4B11BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 39A max collector current. It has a complex configuration, 7 elements, and is used for power control applications. With a nominal turn-off time of 520ns and turn-on time of 47ns, it features a rectangular package style with flange mount.
IRG4PC30UPBF by International Rectifier

IRG4PC30UPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; Transistor Application: POWER CONTROL;
AOTF15B65M1 by Alpha & Omega Semiconductor

AOTF15B65M1

Alpha & Omega Semiconductor

Insulated Gate Bipolar Transistors;
FGH40N65UFDTU-F085 by Onsemi

FGH40N65UFDTU-F085

Onsemi

FGH40N65UFDTU-F085 by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.4V and IC of 80A, ideal for POWER CONTROL applications. It has a max VCE of 650V, operating temperature up to 150°C, and a turn-off time (toff) of 152ns. This RECTANGULAR package transistor features a built-in diode and matte tin finish for efficient performance in various power control systems.