Littelfuse - MMIX2F150N20T

  1. Home
  2. Littelfuse - MMIX2F150N20T
MMIX2F150N20T by Littelfuse

Image shown is a representation only.

Manufacturer Littelfuse
Manufacturer's Part Number MMIX2F150N20T
Description Power Field-Effect Transistors;
Datasheet MMIX2F150N20T Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

FDB52N20TM by Fairchild Semiconductor

FDB52N20TM

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 357 W; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Position: SINGLE;
FDS2572 by Fairchild Semiconductor

FDS2572

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; No. of Elements: 1; Transistor Application: SWITCHING;
IRLML0030TRPBF by International Rectifier

IRLML0030TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; No. of Terminals: 3; Transistor Element Material: SILICON;
IRF4905PBF by Infineon Technologies

IRF4905PBF

Infineon Technologies

IRF4905PBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage and 260A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 200W and operates in the temperature range of -55 to 175°C.
IRFL9014TRPBF by International Rectifier

IRFL9014TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE;
FDD4243-F085 by Onsemi

FDD4243-F085

Onsemi

FDD4243-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 24A, 0.044 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a package style of SMALL OUTLINE and operating temperature range from -55 to 175 °C, it meets AEC-Q101 standards for automotive use.
IRF9530 by Vishay Intertechnology

IRF9530

Vishay Intertechnology

Vishay Intertechnology's IRF9530 is a P-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a max IDM of 48A and EAS of 400mJ, making it suitable for high-power operations. With a max power dissipation of 88W and operating temp up to 150°C, it offers reliable performance in various environments.
GA05JT12-263 by Genesic Semiconductor

GA05JT12-263

Genesic Semiconductor

Power Field-Effect Transistors;
IRFH5010TRPBF by Infineon Technologies

IRFH5010TRPBF

Infineon Technologies

The Infineon Technologies IRFH5010TRPBF is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 0.009 ohm RDS(on). Ideal for SWITCHING applications, it features a 400A IDM and 227mJ EAS. This SINGLE transistor in PLASTIC/EPOXY package operates in ENHANCEMENT MODE at up to 150°C.
FQD12N20LTM_F085 by Fairchild Semiconductor

FQD12N20LTM_F085

Fairchild Semiconductor

FQD12N20LTM_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, 36A IDM, and 0.32 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with a max power dissipation of 55W.
FDS9926A by Onsemi

FDS9926A

Onsemi

FDS9926A by Onsemi is an N-CHANNEL Power FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 6.5A, 0.03 ohm Drain-Source On Resistance, and operates in ENHANCEMENT MODE. This small outline transistor has a Max Power Dissipation of 1.6W and can handle up to 20A Pulsed Drain Current.
IRF530A by Samsung

IRF530A

Samsung

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 55 W; Terminal Position: SINGLE; Maximum Drain-Source On Resistance: .11 ohm;
SISS71DN-T1-GE3 by Vishay Intertechnology

SISS71DN-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SISS71DN-T1-GE3 is a P-channel FET with 100V DS breakdown voltage, ideal for switching applications. Featuring 40A max pulsed drain current and 0.082 ohm max on-resistance, it operates in enhancement mode with -50 to 150°C temperature range. Suitable for surface mount designs, this transistor offers high performance in a compact square package.
IRLR2908TRPBF by International Rectifier

IRLR2908TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 30 A;
IRLML2502 by International Rectifier

IRLML2502

International Rectifier

IRLML2502 by International Rectifier is a N-CHANNEL FET with 20V DS breakdown voltage and 4.2A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a max power dissipation of 1.3W. This MOSFET is surface mountable with GULL WING terminals and can handle up to 33A pulsed drain current.
IRF7341TRPBF by Infineon Technologies

IRF7341TRPBF

Infineon Technologies

Infineon's IRF7341TRPBF is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 42A IDM, 140mJ EAS, and 0.05 ohm RDS(on). With a max power dissipation of 2W and operating temperature up to 150°C, it suits various high-power electronic designs.
FDS3890 by Fairchild Semiconductor

FDS3890

Fairchild Semiconductor

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
FDMS86263P by Onsemi

FDMS86263P

Onsemi

The Onsemi FDMS86263P is a P-CHANNEL Power FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 70A and EAS of 384mJ, operating in ENHANCEMENT MODE. With a compact SMALL OUTLINE package style and -55 to 150 °C temperature range, it offers efficient performance in various electronic systems.
FDD6685 by Fairchild Semiconductor

FDD6685

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Qualification: Not Qualified; JESD-30 Code: R-PSSO-G2;
IRF9540PBF by Vishay Intertechnology

IRF9540PBF

Vishay Intertechnology

Vishay Intertechnology's IRF9540PBF is a P-CHANNEL FET with 100V DS Breakdown Voltage and 72A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 150W, -55 to 175°C operating temperature range, and 0.2 ohm Drain-Source On Resistance.