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| Manufacturer | Microchip Technology |
|---|---|
| Manufacturer's Part Number | APTMC120AM08CD3AG |
| Description | N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1100 W; Maximum Drain Current (ID): 250 A; No. of Elements: 2; |
| Datasheet | APTMC120AM08CD3AG Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Configuration: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON CARBIDE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 250 A |
| Maximum Pulsed Drain Current (IDM): | 550 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | NO |
| No. of Terminals: | 7 |
| Maximum Power Dissipation (Abs): | 1100 W |
| Terminal Position: | UPPER |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-XUFM-X7 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 125 Cel |
| Case Connection: | ISOLATED |
| Maximum Drain-Source On Resistance: | .01 ohm |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -40 Cel |
| Minimum DS Breakdown Voltage: | 1200 V |
| Maximum Drain Current (Abs) (ID): | 250 A |
