APTMC170AM60CT1AG by Microchip Technology | Transistors

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Manufacturer	Microchip Technology
Manufacturer's Part Number	APTMC170AM60CT1AG
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 350 W; Minimum DS Breakdown Voltage: 1700 V; Transistor Element Material: SILICON CARBIDE;
Datasheet	APTMC170AM60CT1AG Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	50 A
Maximum Pulsed Drain Current (IDM):	100 A
Surface Mount:	NO
No. of Terminals:	12
Maximum Power Dissipation (Abs):	350 W
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-P12
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	PIN/PEG
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.07 ohm
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-40 Cel
Minimum DS Breakdown Voltage:	1700 V
Maximum Drain Current (Abs) (ID):	50 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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