Microchip Technology - DN1509N8-G

DN1509N8-G by Microchip Technology

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Manufacturer Microchip Technology
Manufacturer's Part Number DN1509N8-G
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; JEDEC-95 Code: TO-243AA; Maximum Feedback Capacitance (Crss): 15 pF;
Datasheet DN1509N8-G Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .36 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 1.6 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 6 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 15 pF
JEDEC-95 Code: TO-243AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 90 V
Qualification: Not Qualified
Reference Standard: TS 16949
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