MSC080SMA120B by Microchip Technology | Transistors

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Manufacturer	Microchip Technology
Manufacturer's Part Number	MSC080SMA120B
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Feedback Capacitance (Crss): 9 pF; Minimum Operating Temperature: -55 Cel;
Datasheet	MSC080SMA120B Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	37 A
Maximum Pulsed Drain Current (IDM):	91 A
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	200 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.1 ohm
Maximum Feedback Capacitance (Crss):	9 pF
JEDEC-95 Code:	TO-247AD
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	1200 V
Maximum Drain Current (Abs) (ID):	37 A

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