NXP Semiconductors - 934066421127

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934066421127 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 934066421127
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .0032 ohm; Transistor Element Material: SILICON;
Datasheet 934066421127 Datasheet
In Stock2,087
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 419 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 100 A
JEDEC-95 Code: TO-220AB
Maximum Pulsed Drain Current (IDM): 781 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 40 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Reference Standard: AEC-Q101; IEC-60134
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0032 ohm
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