NXP Semiconductors - 935389834128

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935389834128 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 935389834128
Description RF Power Field-Effect Transistors;
Datasheet 935389834128 Datasheet
In Stock1,709
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934061406112 by NXP Semiconductors

934061406112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Transistor Application: AMPLIFIER;
PD84002 by STMicroelectronics

PD84002

STMicroelectronics

STMicroelectronics PD84002 is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage and 2A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it operates in ENHANCEMENT MODE with a max power dissipation of 6W.
PD57045S-E by STMicroelectronics

PD57045S-E

STMicroelectronics

PD57045S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, breakdown voltage of 65 V, and operates in the ultra-high frequency band. Ideal for compact designs with high power dissipation up to 73 W.
VRF157FL by Microchip Technology

VRF157FL

Microchip Technology

VRF157FL by Microchip is a N-CHANNEL RF Power FET with 170V DS Breakdown Voltage, suitable for amplifier applications in the VHF band. It features a max drain current of 60A, operates in enhancement mode, and has a very high frequency band. The package style is flange mount with ceramic-metal sealed co-fired body material.
LET9045S by STMicroelectronics

LET9045S

STMicroelectronics

LET9045S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 9 A, breakdown voltage of 80 V, and operates in the ultra-high frequency band. Ideal for compact, high-performance circuits.
PD55003-E by STMicroelectronics

PD55003-E

STMicroelectronics

STMicroelectronics PD55003-E is an N-CHANNEL RF Power FET for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND with 40V DS Breakdown Voltage and 2.5A Drain Current. The PLASTIC/EPOXY package features GULL WING terminals, SMALL OUTLINE style, and can handle up to 31.7W power dissipation at 165°C max temperature.
934065607112 by NXP Semiconductors

934065607112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Case Connection: SOURCE; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
PD57030S-E by STMicroelectronics

PD57030S-E

STMicroelectronics

PD57030S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact device ensures efficient performance in demanding environments.
934064588112 by NXP Semiconductors

934064588112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Element Material: SILICON; Highest Frequency Band: S BAND;
A2T18S162W31GSR3 by NXP Semiconductors

A2T18S162W31GSR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
CG2H40045F by Wolfspeed

CG2H40045F

Wolfspeed

CG2H40045F by Wolfspeed is an N-CHANNEL RF Power FET with 84V DS Breakdown Voltage and 15dB Power Gain, ideal for S BAND applications. Featuring Gallium Nitride technology, it operates in DEPLETION MODE at temperatures from -40 to 150 °C, with a max ID of 6A.
MRF1513NT1 by Freescale Semiconductor

MRF1513NT1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.2 W; Transistor Application: AMPLIFIER; Moisture Sensitivity Level (MSL): 3;
TSD2922 by STMicroelectronics

TSD2922

STMicroelectronics

TSD2922 by STMicroelectronics is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 125V. Operating in the Ultra High Frequency Band, it has a max temperature of 200 °C. This transistor is commonly used in applications requiring high power and frequency performance, such as telecommunications and radar systems.
SD2942 by STMicroelectronics

SD2942

STMicroelectronics

SD2942 by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 40 A, breakdown voltage of 130 V, and can dissipate up to 500 W. Ideal for high-performance RF amplification in compact designs.
AFT09S282NR3 by NXP Semiconductors

AFT09S282NR3

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; No. of Elements: 1; Maximum Operating Temperature: 150 Cel; Moisture Sensitivity Level (MSL): 3; Terminal Finish: TIN;
CGH40120F-TB by Wolfspeed

CGH40120F-TB

Wolfspeed

Wolfspeed's CGH40120F-TB is an N-CHANNEL RF Power FET with 120V DS Breakdown Voltage. It operates in S BAND, featuring Gallium Nitride technology for high electron mobility. Ideal for amplifier applications, it has a ceramic-metal-sealed co-fired package and gold over nickel terminal finish.
MRF284S by Motorola

MRF284S

Motorola

MRF284S by Motorola is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 9dB Power Gain. Ideal for S BAND applications, it operates in ENHANCEMENT MODE with a max power dissipation of 87.5W at 200°C ambient temperature.
CLF1G0035-100,112 by Ampleon Netherlands B V

CLF1G0035-100,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Reference Standard: IEC-60134; Highest Frequency Band: S BAND;
BLM6G22-30G,118 by Ampleon Netherlands B V

BLM6G22-30G,118

Ampleon Netherlands B V

RF Power Field-Effect Transistors; Terminal Finish: TIN; Peak Reflow Temperature (C): 245; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30;
A3G23H500W17SR3 by NXP Semiconductors

A3G23H500W17SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CQFP-F6; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR;