NXP Semiconductors - AFT18S290-13SR3

  1. Home
  2. NXP Semiconductors - AFT18S290-13SR3
AFT18S290-13SR3 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number AFT18S290-13SR3
Description N-CHANNEL; Configuration: SINGLE; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
In Stock4,087
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): 260
Polarity or Channel Type: N-CHANNEL
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,087 $95.770 $391,411.990

Popular Products

Category Top Products

BLF861A by NXP Semiconductors

BLF861A

NXP Semiconductors

The NXP Semiconductors BLF861A is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a COMMON SOURCE configuration, it has a max Drain Current of 18A and can handle up to 318W power dissipation at 200°C.
TIM1011-8UL by Toshiba

TIM1011-8UL

Toshiba

Toshiba's TIM1011-8UL is an N-channel RF Power FET with a 15V DS breakdown voltage, ideal for X-band applications. Featuring a max drain current of 5.7A and a power dissipation of 40.5W, this transistor operates in depletion mode and has a ceramic-metal-sealed co-fired package body suitable for amplifier configurations.
FLU35XM by Eudyna Devices

FLU35XM

Eudyna Devices

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: GALLIUM ARSENIDE; Operating Mode: DEPLETION MODE; No. of Terminals: 4;
PD55008S-E by STMicroelectronics

PD55008S-E

STMicroelectronics

STMicroelectronics PD55008S-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 4A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features a 52.8W Power Dissipation, SMALL OUTLINE package style, and operates at up to 165°C temperature.
934061249112 by NXP Semiconductors

934061249112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER; Package Style (Meter): FLANGE MOUNT;
PD55025STR-E by STMicroelectronics

PD55025STR-E

STMicroelectronics

STMicroelectronics' PD55025STR-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a SINGLE configuration, 7A ID, and operates in ENHANCEMENT MODE at up to 165°C.
BLM6G22-30G,118 by NXP Semiconductors

BLM6G22-30G,118

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: Tin (Sn); Peak Reflow Temperature (C): 245;
A5G26S008NT6 by NXP Semiconductors

A5G26S008NT6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;
MRF9030LR1 by Motorola

MRF9030LR1

Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 92 W; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR;
MRFE6VP6300HR5 by NXP Semiconductors

MRFE6VP6300HR5

NXP Semiconductors

The NXP Semiconductors MRFE6VP6300HR5 is an RF Power Field Effect Transistor (FET) with a min DS breakdown voltage of 130V. It operates in the ultra high frequency band and is commonly used as an amplifier. This surface mount transistor has a max operating temperature of 225°C.
AFT05MS006NT1 by NXP Semiconductors

AFT05MS006NT1

NXP Semiconductors

RF Power Field-Effect Transistors; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;
A2T18H160-24SR3 by NXP Semiconductors

A2T18H160-24SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
934065231118 by NXP Semiconductors

934065231118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; No. of Elements: 1; Maximum Drain Current (ID): 36 A;
934065972112 by NXP Semiconductors

934065972112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Style (Meter): FLATPACK; Transistor Application: AMPLIFIER;
BLF6G21-10G,135 by Ampleon Netherlands B V

BLF6G21-10G,135

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE; Terminal Form: GULL WING;
BLF3G21-30,112 by Ampleon Netherlands B V

BLF3G21-30,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Maximum Drain Current (ID): 4.5 A; Package Style (Meter): FLANGE MOUNT;
CGH40180PP by Wolfspeed

CGH40180PP

Wolfspeed

CGH40180PP by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage. It operates in the S BAND frequency range and features Gallium Nitride technology. Ideal for amplifier applications, this transistor has a ceramic-metal-sealed co-fired package and is surface mountable.
QPD1008L by Qorvo

QPD1008L

Qorvo

Qorvo's QPD1008L is a single N-channel RF FET with GaN technology, operating in S band. It features a ceramic-metal sealed co-fired package for high electron mobility, suitable for amplifier applications. With a max temperature of 85°C and dual terminal position, it offers reliable performance in various environments.
PD85050S by STMicroelectronics

PD85050S

STMicroelectronics

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
MRF134 by Tyco Electronics M/a-com

MRF134

Tyco Electronics M/a-com

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 4; Terminal Form: FLAT; No. of Elements: 1;