NXP Semiconductors - BGY89

  1. Home
  2. NXP Semiconductors - BGY89
BGY89 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BGY89
Description WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; No. of Functions: 1; Gain: 37 dB; Maximum Supply Current: 340 mA;
Datasheet BGY89 Datasheet
In Stock1,924
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: MODULE
Minimum Operating Frequency: 40 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 340 mA
Minimum Operating Temperature: -20 Cel
No. of Functions: 1
Maximum Input Power (CW): 6.25 dBm
Package Equivalence Code: SOT-115C
Technology: HYBRID
Characteristic Impedance: 75 ohm
Additional Features: LOWNOISE
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 450 MHz
RF or Microwave Device Type: WIDE BAND HIGH POWER
Gain: 37 dB
Power Supplies (V): 24
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,924 - -

Popular Products

Category Top Products

MGA-82563-BLKG by Agilent Technologies

MGA-82563-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 13 dBm;
SMA70-2 by Wj Communications

SMA70-2

Wj Communications

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 13 dBm; Minimum Operating Frequency: 10 MHz; Minimum Operating Temperature: -54 Cel; Maximum Operating Temperature: 85 Cel;
760 by Anaren

760

Anaren

RF/Microwave Amplifiers; No. of Terminals: 8; Package Body Material: METAL; Technology: HYBRID; Screening Level: 38535Q/M;38534H;883B; No. of Functions: 1;
HMC429LP4E by Analog Devices

HMC429LP4E

Analog Devices

Analog Devices' HMC429LP4E is a RF & Microwave Amplifier with VSWR of 2, operating from -40°C to 85°C. It's a narrow band low power device with 50 ohm impedance, covering frequencies from 4450 MHz to 5000 MHz. Ideal for applications requiring precise amplification in RF and microwave systems.
HMC963LC4 by Analog Devices

HMC963LC4

Analog Devices

Analog Devices' HMC963LC4 is a wide band low power RF amplifier with 16.5 dB gain, operating from 6-26.5 GHz. It can handle up to 0 dBm CW input power, ideal for RF & microwave applications requiring high frequency amplification in temperatures ranging from -40°C to 85°C.
TQP3M9037 by Triquint Semiconductor

TQP3M9037

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Characteristic Impedance: 50 ohm;
AMF-4F-02200230-15-13P by L-3 Narda-miteq

AMF-4F-02200230-15-13P

L-3 Narda-miteq

AMF-4F-02200230-15-13P by L-3 Narda-miteq is a COAXIAL RF amplifier with 58 dB Gain, VSWR of 1.5, operating from 2200 MHz to 2300 MHz. Ideal for narrowband low-power applications in RF & Microwave systems.
TGA2578 by Qorvo

TGA2578

Qorvo

TGA2578 by Qorvo is a GAN technology RF amplifier with 27 dB gain, operating from 2-6 GHz. It has a max input power of 25 dBm and VSWR of 10, suitable for wideband high-power applications. With a compact design and surface mount feature, it can handle temperatures up to 275°C.
HMC564LC4TR by Hittite Microwave

HMC564LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Maximum Input Power (CW): 5 dBm;
MMG3002NT1 by Motorola

MMG3002NT1

Motorola

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TO-243;
MGA-631P8-BLKG by Broadcom

MGA-631P8-BLKG

Broadcom

Broadcom's MGA-631P8-BLKG is a GAAS RF amplifier with 16dB gain, operating from 400MHz to 1500MHz. It has a max input power of 20dBm and uses a 4V power supply. Ideal for wideband low-power applications, this component features surface mounting and a characteristic impedance of 50Ω.
HMC751LC4TR by Hittite Microwave

HMC751LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Characteristic Impedance: 50 ohm;
MGA-635P8-TR1G by Broadcom

MGA-635P8-TR1G

Broadcom

Broadcom's MGA-635P8-TR1G is a GAAS RF amplifier with 16.5 dB gain, operating from 2300 to 4000 MHz. It has a max input power of 20 dBm and operates on a 5V supply, making it ideal for wideband medium-power applications in RF and microwave systems. With a compact surface-mount package and high temperature range (-40 to 85°C), it offers reliable performance in various environments.
HMC606LC5TR by Analog Devices

HMC606LC5TR

Analog Devices

Analog Devices' HMC606LC5TR is a wide band low power RF amplifier with 9.5 dB gain, operating from 2-18000 MHz. It has a max input power of 15 dBm and operates on a 5V supply with 95 mA current draw. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.
RA35H1516M-101 by Mitsubishi Electric

RA35H1516M-101

Mitsubishi Electric

Mitsubishi Electric's RA35H1516M-101 is a plastic/epoxy RF amplifier module with 20 dBm CW input power, VSWR of 3, and operating frequency range of 154-162 MHz. Ideal for narrowband high-power applications, it operates at temperatures from -30 to 110°C with hybrid technology and supports power supplies of 5V and 12.5V.
HMC465LP5ETR by Hittite Microwave

HMC465LP5ETR

Hittite Microwave

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn);
HMC635LC4 by Hittite Microwave

HMC635LC4

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Package Equivalence Code: LCC24,.16SQ,20;
GALI-2+ by Mini-circuits

GALI-2+

Mini-circuits

GALI-2+ by Mini-circuits is a RF amplifier with 12 dB gain, operating from 0 to 8000 MHz. It has a max input power of 15 dBm and VSWR of 2.6, suitable for wideband low-power applications in RF and microwave systems. The component is constructed with plastic/epoxy package body material and operates b/w -45°C to 85°C temperature range.
HMC505LP4TR by Hittite Microwave

HMC505LP4TR

Hittite Microwave

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 3;
MGA-81563-BLK by Agilent Technologies

MGA-81563-BLK

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;