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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BLF245C |
| Description | N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Application: AMPLIFIER; Case Connection: ISOLATED; |
| Datasheet | BLF245C Datasheet |
| In Stock | 560 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Configuration: | COMMON SOURCE, 2 ELEMENTS |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | 4.5 A |
| Surface Mount: | YES |
| No. of Terminals: | 8 |
| Terminal Position: | DUAL |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-CDFM-F8 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Highest Frequency Band: | VERY HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 200 Cel |
| Case Connection: | ISOLATED |
| Maximum Power Dissipation Ambient: | 85 W |
| Maximum Drain-Source On Resistance: | 1.5 ohm |
| Minimum Power Gain (Gp): | 16 dB |
| Maximum Feedback Capacitance (Crss): | 8 pF |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 65 V |
| Qualification: | Not Qualified |
