NXP Semiconductors - BLF7G27L-135,112

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BLF7G27L-135,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF7G27L-135,112
Description N-CHANNEL; Configuration: SINGLE; Maximum Drain Current (Abs) (ID): 28 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Maximum Drain Current (ID): 28 A;
Datasheet BLF7G27L-135,112 Datasheet
In Stock1,049
NAME DESCRIPTION
Other Names: 934065601112
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 200 Cel
Maximum Drain Current (ID): 28 A
Maximum Drain Current (Abs) (ID): 28 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
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