NXP Semiconductors - BUK9MJJ-65PLL

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BUK9MJJ-65PLL by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BUK9MJJ-65PLL
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; No. of Elements: 2; Qualification: Not Qualified;
Datasheet BUK9MJJ-65PLL Datasheet
In Stock634
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 11.6 A
JEDEC-95 Code: MS-013AC
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 20
Minimum DS Breakdown Voltage: 65 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G20
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: CURRENT SENSING
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .0188 ohm
Moisture Sensitivity Level (MSL): 3
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