NXP Semiconductors - BUK9Y09-40B,115

  1. Home
  2. NXP Semiconductors - BUK9Y09-40B,115
BUK9Y09-40B,115 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BUK9Y09-40B,115
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 105.3 W; Terminal Finish: TIN; Maximum Drain Current (ID): 75 A;
Datasheet BUK9Y09-40B,115 Datasheet
In Stock3,219
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 75 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 105.3 W
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (Abs) (ID): 75 A
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,219 $0.449 $1,445.331

Popular Products

Category Top Products

IRF3710PBF by Infineon Technologies

IRF3710PBF

Infineon Technologies

IRF3710PBF by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage and 180A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 200W and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 175°C.
CSD16301Q2 by Texas Instruments

CSD16301Q2

Texas Instruments

CSD16301Q2 by Texas Instruments is a N-CHANNEL Power FET with 25V DS Breakdown Voltage and 20A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 2.3W. This SMALL OUTLINE transistor has a -55 to 150 °C operating temperature range and 0.034 ohm Drain-Source On Resistance.
IRFP460LCPBF by Vishay Intertechnology

IRFP460LCPBF

Vishay Intertechnology

Vishay Intertechnology's IRFP460LCPBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 80A IDM and 960mJ EAS ratings. Operating in ENHANCEMENT MODE, it features 0.27 ohm Drain-Source On Resistance and can handle up to 280W power dissipation.
IRFL9014TRPBF by Vishay Intertechnology

IRFL9014TRPBF

Vishay Intertechnology

Vishay Intertechnology's IRFL9014TRPBF is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 14A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 3.1W.
SI7439DP-T1-E3 by Vishay Intertechnology

SI7439DP-T1-E3

Vishay Intertechnology

Vishay Intertechnology's SI7439DP-T1-E3 is a P-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 50A IDM, 80mJ EAS, and 0.09 ohm Drain-Source On Resistance. Operating at up to 150°C, it has a small outline package style for efficient heat dissipation.
DMP3056L-7 by Diodes Incorporated

DMP3056L-7

Diodes Incorporated

DMP3056L-7 by Diodes Inc. is a P-channel FET with 30V DS breakdown voltage and 20A IDM. Ideal for switching applications, it features a single configuration with built-in diode, 0.05 ohm RDS(on), and operates in enhancement mode. Suitable for surface mount designs, it has a small outline package style and can withstand temperatures as low as -55°C.
FDD4141-F085 by Onsemi

FDD4141-F085

Onsemi

FDD4141-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0123 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 69W and can withstand temperatures from -55 to 150 °C.
IRF540STRLPBF by Vishay Intertechnology

IRF540STRLPBF

Vishay Intertechnology

Vishay Intertechnology's IRF540STRLPBF is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 110A IDM and 0.077 ohm RDS(on). With a max power dissipation of 150W, this MOSFET operates in ENHANCEMENT MODE at up to 175°C.
2N7002BKW,115 by NXP Semiconductors

2N7002BKW,115

NXP Semiconductors

2N7002BKW,115 by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 0.31A and power dissipation of 0.88W. It operates in enhancement mode, suitable for applications requiring a single configuration such as power management systems or voltage regulators.
FQB47P06TM_AM002 by Fairchild Semiconductor

FQB47P06TM_AM002

Fairchild Semiconductor

Fairchild Semiconductor's FQB47P06TM_AM002 is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 188A IDM, 820mJ EAS, and 0.026 ohm RDS(ON). With a max power dissipation of 160W and operating temperature up to 175°C, it offers reliable performance in various electronic systems.
IRLML2502 by International Rectifier Hirel Products

IRLML2502

International Rectifier Hirel Products

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 33 A; Additional Features: HIGH RELIABILITY; No. of Elements: 1;
IPB020N10N5ATMA1 by Infineon Technologies

IPB020N10N5ATMA1

Infineon Technologies

Infineon's IPB020N10N5ATMA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.002 ohm RDS(on), and 120A ID. Ideal for switching applications due to its 480A IDM and built-in diode. Features GULL WING terminals in a SMALL OUTLINE package style.
JANTX2N6796 by Harris Semiconductor

JANTX2N6796

Harris Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: WIRE; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
BSC320N20NS3GATMA1 by Infineon Technologies

BSC320N20NS3GATMA1

Infineon Technologies

BSC320N20NS3GATMA1 by Infineon is a N-CHANNEL FET with 200V DS breakdown voltage, 144A pulsed drain current, and 0.032 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode and enhancement mode operation. Package style is small outline, suitable for surface mount technology.
FDS4465 by Fairchild Semiconductor

FDS4465

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Time At Peak Reflow Temperature (s): 30; Operating Mode: ENHANCEMENT MODE;
FDMS86163P by Onsemi

FDMS86163P

Onsemi

FDMS86163P by Onsemi is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 100A and EAS of 486mJ, operating in ENHANCEMENT MODE. With a package style of SMALL OUTLINE and -55 to 150 °C temperature range, it offers high performance in power management systems.
BSC067N06LS3GXT by Infineon Technologies

BSC067N06LS3GXT

Infineon Technologies

BSC067N06LS3GXT by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a max IDM of 200A and 0.0067 ohm RDS(on), operating in enhancement mode up to 150°C. This MOSFET comes in a small outline package with built-in diode, suitable for high-power electronic designs.
FDB2532 by Onsemi

FDB2532

Onsemi

FDB2532 by Onsemi is a N-CHANNEL Power FET with 150V DS Breakdown Voltage and 79A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has an EAS of 400mJ and can handle up to 310W power dissipation.
2N7000 by Philips Semiconductors

2N7000

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Terminal Finish: Matte Tin (Sn);
FDS4935A by Fairchild Semiconductor

FDS4935A

Fairchild Semiconductor

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Application: SWITCHING; Terminal Finish: MATTE TIN;