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Manufacturer | NXP Semiconductors |
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Manufacturer's Part Number | MRF281ZR1 |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Style (Meter): SMALL OUTLINE; |
Datasheet | MRF281ZR1 Datasheet |
In Stock | 4,730 |
NAME | DESCRIPTION |
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Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
Maximum Time At Peak Reflow Temperature (s): | 40 |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | AMPLIFIER |
Sub-Category: | FET General Purpose Power |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 2 |
Minimum DS Breakdown Voltage: | 65 V |
Qualification: | Not Qualified |
Maximum Power Dissipation (Abs): | 20 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-CDSO-G2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Highest Frequency Band: | S BAND |
Maximum Operating Temperature: | 200 Cel |
Case Connection: | SOURCE |
Peak Reflow Temperature (C): | 260 |