NXP Semiconductors - MRF5S21045NR1

MRF5S21045NR1 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number MRF5S21045NR1
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; No. of Terminals: 4; Moisture Sensitivity Level (MSL): 3;
Datasheet MRF5S21045NR1 Datasheet
In Stock832
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Matte Tin (Sn)
No. of Terminals: 4
Maximum Power Dissipation (Abs): 130 W
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PDFM-F4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: S BAND
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
Moisture Sensitivity Level (MSL): 3
JEDEC-95 Code: TO-270
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 68 V
Qualification: Not Qualified
Peak Reflow Temperature (C): 260
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