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Manufacturer | NXP Semiconductors |
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Manufacturer's Part Number | MRF9002R2 |
Description | N-CHANNEL; Configuration: COMMON SOURCE, 3 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Package Style (Meter): SMALL OUTLINE; Operating Mode: ENHANCEMENT MODE; |
Datasheet | MRF9002R2 Datasheet |
In Stock | 3,276 |
NAME | DESCRIPTION |
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Minimum Power Gain (Gp): | 18 dB |
Package Body Material: | PLASTIC/EPOXY |
Configuration: | COMMON SOURCE, 3 ELEMENTS |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | AMPLIFIER |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 16 |
Minimum DS Breakdown Voltage: | 65 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G16 |
No. of Elements: | 3 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | SOURCE |