NXP Semiconductors - MRF9002R2

MRF9002R2 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number MRF9002R2
Description N-CHANNEL; Configuration: COMMON SOURCE, 3 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Package Style (Meter): SMALL OUTLINE; Operating Mode: ENHANCEMENT MODE;
Datasheet MRF9002R2 Datasheet
In Stock3,276
NAME DESCRIPTION
Minimum Power Gain (Gp): 18 dB
Package Body Material: PLASTIC/EPOXY
Configuration: COMMON SOURCE, 3 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 16
Minimum DS Breakdown Voltage: 65 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G16
No. of Elements: 3
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
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