NXP Semiconductors - P310G002A4

  1. Home
  2. NXP Semiconductors - P310G002A4
P310G002A4 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number P310G002A4
Description Small Signal Field-Effect Transistors; Surface Mount: YES; JESD-30 Code: R-PDSO-N2; Terminal Position: DUAL; Package Shape: RECTANGULAR; No. of Terminals: 2;
Datasheet P310G002A4 Datasheet
In Stock1,112
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
No. of Terminals: 2
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Surface Mount: YES
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,112 - -

Popular Products

Category Top Products

FDG6332C by Fairchild Semiconductor

FDG6332C

Fairchild Semiconductor

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (Abs) (ID): .6 A; Package Shape: RECTANGULAR;
ZVN3320FTA by Diodes Incorporated

ZVN3320FTA

Diodes Incorporated

ZVN3320FTA by Diodes Inc. is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for small signal applications. Operating in Enhancement Mode, it has 1A IDM and 0.06A ID, with 25 ohm RDS(on). Its GULL WING terminals and PLASTIC/EPOXY package make it suitable for surface mount designs requiring fast switching speeds.
2N7002K by Panjit International

2N7002K

Panjit International

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Form: GULL WING; Additional Features: ULTRA-LOW RESISTANCE;
2N7002DW by Lite-on Semiconductor

2N7002DW

Lite-on Semiconductor

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Drain-Source On Resistance: 7.5 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Feedback Capacitance (Crss): 5 pF;
FDN340P by Onsemi

FDN340P

Onsemi

FDN340P by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 2A, operating in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C. The package is a SMALL OUTLINE with GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.
BSS138 by Taitron Components

BSS138

Taitron Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3.5 ohm; Maximum Drain Current (ID): .2 A; Peak Reflow Temperature (C): NOT SPECIFIED;
DMG1029SV-7 by Diodes Incorporated

DMG1029SV-7

Diodes Incorporated

DMG1029SV-7 by Diodes Inc. is a Small Signal FET with N/P-channel types, ideal for switching applications. Features include 60V DS breakdown voltage, 0.5A max drain current, and 1W max power dissipation. Utilizes MOSFET tech with 1.7 ohm RDS(on) for efficient operation in enhancement mode at up to 150°C.
SI2333DDS-T1-GE3 by Vishay Intertechnology

SI2333DDS-T1-GE3

Vishay Intertechnology

SI2333DDS-T1-GE3 by Vishay Intertechnology is a P-channel FET with 12V breakdown voltage and 6A drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 1.7W. The transistor features a small outline package style and can withstand temperatures from -55 to 150°C.
FDN335N_NL by Fairchild Semiconductor

FDN335N_NL

Fairchild Semiconductor

Fairchild Semiconductor's FDN335N_NL is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 1.7A Drain Current, 0.07 ohm On Resistance, and operates in ENHANCEMENT MODE. The transistor comes in a RECTANGULAR package with GULL WING terminals and can handle up to 150°C operating temperature.
ZVP1320FTA by Zetex Plc

ZVP1320FTA

Zetex Plc

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 200 V; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Position: DUAL;
IRLML6344TRPBF by Infineon Technologies

IRLML6344TRPBF

Infineon Technologies

Small Signal Field-Effect Transistors; Qualification: Not Qualified; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (Abs) (ID): 5 A; Maximum Time At Peak Reflow Temperature (s): 30;
2N7000TA by Calogic

2N7000TA

Calogic

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: ROUND; Transistor Application: SWITCHING; Maximum Drain Current (ID): .2 A;
2N7002 by Inter F E T

2N7002

Inter F E T

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 7.5 ohm; Maximum Drain Current (Abs) (ID): .115 A;
DMN3067LW-7 by Diodes Incorporated

DMN3067LW-7

Diodes Incorporated

Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: MATTE TIN;
FDS6912A by Onsemi

FDS6912A

Onsemi

FDS6912A by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 6A max drain current, and 0.028 ohm max on resistance. Ideal for switching applications, it features separate elements with built-in diode in a small outline package suitable for surface mount technology.
FDC5614P by Fairchild Semiconductor

FDC5614P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 3 A;
BSS138PS,115 by Nexperia

BSS138PS,115

Nexperia

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;
NDS9407 by Fairchild Semiconductor

NDS9407

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
LND150K1-G by Microchip Technology

LND150K1-G

Microchip Technology

LND150K1-G by Microchip is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. Operating in depletion mode, it has a max power dissipation of 0.36W and can handle a max drain current of 0.013A. With a temp range from -55 to 150 °C, this MOSFET is suitable for various electronic designs.
FDV302P by Onsemi

FDV302P

Onsemi

FDV302P by Onsemi is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.12A Drain Current, and 10 ohm On Resistance. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package suitable for surface mount technology.