NXP Semiconductors - PHB80N06LTT/R

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PHB80N06LTT/R by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PHB80N06LTT/R
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 178 W; JESD-30 Code: R-PSSO-G2; Maximum Pulsed Drain Current (IDM): 240 A;
Datasheet PHB80N06LTT/R Datasheet
In Stock3,509
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 195 ns
Maximum Drain Current (ID): 75 A
Maximum Pulsed Drain Current (IDM): 240 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 178 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 260 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 178 W
Maximum Drain-Source On Resistance: .014 ohm
Avalanche Energy Rating (EAS): 200 mJ
Maximum Feedback Capacitance (Crss): 330 pF
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 55 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 75 A
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