NXP Semiconductors - PHN103

PHN103 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PHN103
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 4 W; Minimum DS Breakdown Voltage: 30 V; Package Shape: RECTANGULAR;
Datasheet PHN103 Datasheet
In Stock4,173
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 8.5 A
Sub-Category: FET General Purpose Powers
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 4 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: 4 W
Maximum Drain-Source On Resistance: .03 ohm
JEDEC-95 Code: MS-012AA
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 8.5 A
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