NXP Semiconductors - PHP125

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PHP125 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PHP125
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.8 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: .25 ohm;
Datasheet PHP125 Datasheet
In Stock126
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 80 ns
Maximum Drain Current (ID): 2.5 A
Maximum Pulsed Drain Current (IDM): 10 A
Sub-Category: Other Transistors
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 2.8 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 140 ns
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: 2 W
Maximum Drain-Source On Resistance: .25 ohm
JEDEC-95 Code: MS-012AA
Polarity or Channel Type: P-CHANNEL
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
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