
Image shown is a representation only.
Manufacturer | NXP Semiconductors |
---|---|
Manufacturer's Part Number | PHP225T/R |
Description | P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Application: SWITCHING; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au); |
Datasheet | PHP225T/R Datasheet |
In Stock | 2,366 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 2.3 A |
JEDEC-95 Code: | MS-012AA |
Sub-Category: | Other Transistors |
Polarity or Channel Type: | P-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | Nickel/Palladium/Gold (Ni/Pd/Au) |
JESD-609 Code: | e4 |
No. of Terminals: | 8 |
Qualification: | Not Qualified |
Maximum Power Dissipation (Abs): | 2 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G8 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain Current (Abs) (ID): | 2.3 A |
Maximum Power Dissipation Ambient: | 4 W |