NXP Semiconductors - PMXB65ENEX

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PMXB65ENEX by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PMXB65ENEX
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.33 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 3.2 A;
Datasheet PMXB65ENEX Datasheet
In Stock1,130
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 8.33 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 3.2 A
Maximum Drain Current (Abs) (ID): 3.2 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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