NXP Semiconductors - PSMN6R3-120ESQ

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PSMN6R3-120ESQ by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PSMN6R3-120ESQ
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 405 W; Maximum Drain Current (Abs) (ID): 70 A; Maximum Operating Temperature: 175 Cel;
Datasheet PSMN6R3-120ESQ Datasheet
In Stock1,487
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 405 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): 70 A
Maximum Drain Current (Abs) (ID): 70 A
Sub-Category: FET General Purpose Powers
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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Pricing (USD)

Qty. Unit Price Ext. Price
1,487 $0.943 $1,402.241

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