Onsemi - ECH8663R

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ECH8663R by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number ECH8663R
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 8 A; Maximum Drain Current (Abs) (ID): 8 A;
Datasheet ECH8663R Datasheet
In Stock2,429
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 1.5 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 8 A
Maximum Drain Current (Abs) (ID): 8 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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Pricing (USD)

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