EFC4C002NLTDG by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	EFC4C002NLTDG
Description	N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Maximum Operating Temperature: 150 Cel; Case Connection: SOURCE;
Datasheet	EFC4C002NLTDG Datasheet
In Stock	1,978

NAME	DESCRIPTION
Other Names:	488-EFC4C002NLTDGCT EFC4C002NLTDG-ND 488-EFC4C002NLTDGTR 488-EFC4C002NLTDGDKR
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	8
Maximum Power Dissipation (Abs):	2.6 W
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-PBCC-N8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	DEPLETION MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	SOURCE
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,978	$5.560	$10,997.680

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