Onsemi - FDS6986AS_NL

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FDS6986AS_NL by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FDS6986AS_NL
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Maximum Pulsed Drain Current (IDM): 20 A;
Datasheet FDS6986AS_NL Datasheet
In Stock1,326
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 27 ns
Maximum Drain Current (ID): 6.5 A
Maximum Pulsed Drain Current (IDM): 20 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 29 ns
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: 2 W
Maximum Drain-Source On Resistance: .029 ohm
Maximum Feedback Capacitance (Crss): 60 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
Maximum Drain Current (Abs) (ID): 6.5 A
Peak Reflow Temperature (C): NOT SPECIFIED
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