Onsemi - FGH75N60UFTU

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FGH75N60UFTU by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FGH75N60UFTU
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 452 W; Maximum Collector Current (IC): 150 A; Maximum Collector-Emitter Voltage: 600 V; Maximum Gate-Emitter Voltage: 20 V;
Datasheet FGH75N60UFTU Datasheet
In Stock1,068
NAME DESCRIPTION
Maximum Collector Current (IC): 150 A
Maximum Power Dissipation (Abs): 452 W
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Fall Time (tf): 80 ns
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