Onsemi - HUF76633P3-F085

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HUF76633P3-F085 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number HUF76633P3-F085
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 145 W; Terminal Position: SINGLE; Package Style (Meter): FLANGE MOUNT;
Datasheet HUF76633P3-F085 Datasheet
In Stock2,688
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 38 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 145 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .035 ohm
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 100 V
Additional Features: ULTRA LOW RESISTANCE
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): 39 A
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Pricing (USD)

Qty. Unit Price Ext. Price
2,688 $0.964 $2,591.232

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