Onsemi - HUFA76407DK8T-F085

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HUFA76407DK8T-F085 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number HUFA76407DK8T-F085
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 3.8 A;
Datasheet HUFA76407DK8T-F085 Datasheet
In Stock1,871
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 24 ns
Maximum Drain Current (ID): 3.5 A
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
No. of Terminals: 8
Maximum Power Dissipation (Abs): 2.5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 116 ns
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .09 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: HUFA76407DK8T_F085-ND
HUFA76407DK8T_F085
488-HUFA76407DK8T-F085CT
HUFA76407DK8T-F085-ND
488-HUFA76407DK8T-F085DKR
488-HUFA76407DK8T-F085TR
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): 3.8 A
Peak Reflow Temperature (C): 260
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