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Manufacturer | Onsemi |
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Manufacturer's Part Number | MCH6627 |
Description | N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .3 ohm; |
Datasheet | MCH6627 Datasheet |
In Stock | 789 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 1.4 A |
Sub-Category: | Other Transistors |
Polarity or Channel Type: | N-CHANNEL AND P-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 6 |
Minimum DS Breakdown Voltage: | 30 V |
Qualification: | Not Qualified |
Maximum Power Dissipation (Abs): | .8 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-F6 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | DEPLETION MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain Current (Abs) (ID): | 1 A |
Maximum Drain-Source On Resistance: | .3 ohm |