Onsemi - MTB6N60E1T4

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MTB6N60E1T4 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number MTB6N60E1T4
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet MTB6N60E1T4 Datasheet
In Stock2,428
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 6 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Maximum Power Dissipation (Abs): 125 W
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 6 A
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