Onsemi - NCV8402AT2G

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NCV8402AT2G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NCV8402AT2G
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; Terminal Position: DUAL; Terminal Form: NO LEAD;
Datasheet NCV8402AT2G Datasheet
In Stock1,097
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2 A
Surface Mount: YES
No. of Terminals: 6
Maximum Power Dissipation (Abs): 1.7 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .2 ohm
Avalanche Energy Rating (EAS): 150 mJ
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Minimum DS Breakdown Voltage: 42 V
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): 2 A
Peak Reflow Temperature (C): NOT SPECIFIED
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