NTMFSS1D1N06CLT1G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTMFSS1D1N06CLT1G
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Transistor Application: SWITCHING; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet	NTMFSS1D1N06CLT1G Datasheet
In Stock	2,271

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	40 A
Maximum Pulsed Drain Current (IDM):	900 A
Surface Mount:	YES
No. of Terminals:	8
Maximum Power Dissipation (Abs):	200 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-N8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	SOURCE
Maximum Drain-Source On Resistance:	.0017 ohm
Avalanche Energy Rating (EAS):	776 mJ
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Maximum Drain Current (Abs) (ID):	287 A
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,271	-	-

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