Onsemi - NTUD3129PT5G

  1. Home
  2. Onsemi - NTUD3129PT5G
NTUD3129PT5G by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number NTUD3129PT5G
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-F6; Maximum Drain-Source On Resistance: 5 ohm; Qualification: Not Qualified;
Datasheet NTUD3129PT5G Datasheet
In Stock1,182
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .14 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Terminal Finish: NICKEL GOLD PALLADIUM
No. of Terminals: 6
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): 260
Maximum Drain-Source On Resistance: 5 ohm
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,182 $0.314 $371.148

Popular Products

Category Top Products

SI2308BDS-T1-E3 by Vishay Intertechnology

SI2308BDS-T1-E3

Vishay Intertechnology

SI2308BDS-T1-E3 by Vishay Intertechnology is a N-CHANNEL FET for SWITCHING applications. It has a 60V DS Breakdown Voltage, 2.3A Drain Current, and 0.156 ohm On Resistance. With an Operating Temperature range of -55 to 150 °C, it is ideal for small outline surface mount designs requiring high power dissipation.
2N7002K by Lite-on Semiconductor

2N7002K

Lite-on Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR;
FDV302P_NL by Fairchild Semiconductor

FDV302P_NL

Fairchild Semiconductor

FDV302P_NL by Fairchild Semiconductor is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.12A Drain Current, and 10 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE, featuring a RECTANGULAR package with GULL WING terminals and operating up to 150°C.
2N7002 by Yangzhou Yangjie Electronics

2N7002

Yangzhou Yangjie Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Maximum Drain Current (ID): .34 A;
BSS127H6327XTSA2 by Infineon Technologies

BSS127H6327XTSA2

Infineon Technologies

Infineon Technologies' BSS127H6327XTSA2 is a small signal N-channel FET with a min DS breakdown voltage of 600V. It operates in enhancement mode and has a max drain current of 0.021A. This transistor is commonly used in applications requiring high voltage switching and amplification.
BVSS138LT1G by Onsemi

BVSS138LT1G

Onsemi

BVSS138LT1G by Onsemi is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications, it operates b/w -55 to 150 °C and complies with AEC-Q101 standard.
NDS355AN by Onsemi

NDS355AN

Onsemi

NDS355AN by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 1.7A Drain Current, 0.085 ohm On Resistance, and -55 to 150 °C Operating Temperature range. Suitable for small outline packages in surface mount configurations.
ZXM61N02FTA by Zetex Plc

ZXM61N02FTA

Zetex Plc

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1; Maximum Drain-Source On Resistance: .18 ohm;
BVSS123LT1G by Onsemi

BVSS123LT1G

Onsemi

BVSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A max drain current, and 6 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a temp range of -55 to 150 °C. It comes in a small outline package with gull wing terminals for surface mount assembly.
MMBF170Q-13-F by Diodes Incorporated

MMBF170Q-13-F

Diodes Incorporated

Small Signal Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260;
BSS123 by Good-ark Electronics

BSS123

Good-ark Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Maximum Time At Peak Reflow Temperature (s): 40;
2N7002KT1G by Onsemi

2N7002KT1G

Onsemi

2N7002KT1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A max drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.3W. This small outline transistor features a built-in diode and GULL WING terminals, suitable for surface mount configurations.
NDS331ND87Z by Fairchild Semiconductor

NDS331ND87Z

Fairchild Semiconductor

NDS331ND87Z by Fairchild Semiconductor is a N-CHANNEL FET with 20V DS Breakdown Voltage, 1.3A ID, and 0.16 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with GULL WING terminals.
2N7002 by Jiangsu Changjiang Electronics Technology

2N7002

Jiangsu Changjiang Electronics Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;
FDV304PD87Z by Fairchild Semiconductor

FDV304PD87Z

Fairchild Semiconductor

Fairchild Semiconductor's FDV304PD87Z is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.46A ID, and 1.1 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. The SMALL OUTLINE package features GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.
BSS138P by Changzhou Galaxy Century Microelectronics

BSS138P

Changzhou Galaxy Century Microelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Operating Temperature: 150 Cel;
BS170 by General Semiconductor

BS170

General Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Terminal Form: WIRE; Package Style (Meter): CYLINDRICAL;
MMBFJ201 by National Semiconductor

MMBFJ201

National Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; No. of Elements: 1; Package Shape: RECTANGULAR;
DMG1012UW-7 by Diodes Incorporated

DMG1012UW-7

Diodes Incorporated

DMG1012UW-7 by Diodes Inc. is a N-channel FET with 20V DS breakdown voltage and 1A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.45 ohm on-resistance. Its small outline package and -55 to 150°C operating range make it suitable for various electronic devices.
ZVN3320FTA by Diodes Incorporated

ZVN3320FTA

Diodes Incorporated

ZVN3320FTA by Diodes Inc. is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for small signal applications. Operating in Enhancement Mode, it has 1A IDM and 0.06A ID, with 25 ohm RDS(on). Its GULL WING terminals and PLASTIC/EPOXY package make it suitable for surface mount designs requiring fast switching speeds.