NVBGS1D9N08HT4G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NVBGS1D9N08HT4G
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Reference Standard: AEC-Q101; Transistor Element Material: SILICON;
Datasheet	NVBGS1D9N08HT4G Datasheet
In Stock	151

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss):	35 pF
Maximum Drain Current (ID):	256 A
JEDEC-95 Code:	TO-263
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	80 V
Maximum Power Dissipation (Abs):	250 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Reference Standard:	AEC-Q101
Maximum Drain Current (Abs) (ID):	256 A
Maximum Drain-Source On Resistance:	.0019 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
151	-	-

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